Second Year Physics Chapter 18 Online MCQ Test for 2nd Year Physics Chapter 18 Electronics Preparation

FSC Part 2 Physics
Chapter 18 Test

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Physics FSC Part 2 Chapter 18 Online MCQ's Test

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Question # 1

Minimum number of semi conductor diodes required for full wave rectification are.

Question # 2

A transistor has parts:

Question # 3

The ratio Beta in transistor is called.

Question # 4

Which one has greater cone of impurity among all:

Question # 5

The potential difference across depletion region in case of Si is

Question # 6

In a transistor, collector current is controlled by:

Question # 7

The P.D develop in case of silicon is:

Question # 8

A diode characteristics curve is a plot between

Question # 9

Transistor was discovered by

Question # 10

The output voltage of a rectifier is.

Question # 11

An expression for gain of an inverting amplifier is

Question # 12

For automatic Switching of streetlight, the op amplifier is used as.

Question # 13

In a transistor, collector current is controlled by:

Question # 14

The input resistance of an op amplifier is.

Question # 15

Photodiode is used for:

Question # 16

The output of two input is zero only when its.

Question # 17

The device which is used as amplifier and works with the negative feedback is.

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FSC Part 2 Physics Chapter 18 Online Test MCQ's

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FSc Part II Physics Chapter 0 Important MCQ's

Sr.# Question Answer
1 The potential difference across depletion region in case of Si is
A. 0.6 volt
B. 0.9 volt
C. 0.7 volt
D. 0.2 volt
2 Which device is used as a rectifier?
A. Capacitor
B. Transistor
C. Diode
D. Transformer
3 In an N-type silicon, which of the following statement is true?
A. Electrons are majority carriers & trivalent atoms are the dopants
B. Electrons are majority carriers & pentavalent atoms are the dopants
C. Holes are minority carriers & pentavalent atoms are the dopants.
D. Holes are minority carriers & trivavalent atoms are the dopants.
4 The output voltage of a rectifier is.
A. Smooth
B. Pulsating
C. Alternating
D. Per featly direct
5 The average gap for Germanium at 0K is
A. 1.12 ev
B. 0.02 ev
C. 6.72 ev
D. 7.2 ev
6 Light emitting diodes are made from semiconductors.
A. Silicon
B. Germanium
C. Carbon
D. Gallium arsenide
7 Doping is made comparatively larger in
A. Emitter
B. Base
C. Collector
D. P -type semi conductor
8 The device which is used as amplifier and works with the negative feedback is.
A. Operational amplifier
B. P-n-p transistor
C. n-p-n transistor
D. Transistor
9 The use of LDR is in the circuit of.
A. Logic gate
B. Rectifier
C. Oscillator
D. High Switch
10 Depletion region carries.
A. -ve charge
B. +ve charge
C. Ions
D. No charge

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